Infineon Technologies introduces rad-hard 1 and 2 Mb parallel interface F-RAM devices

Infineon Technologies AG has announced the availability of the industry’s first radiation-hardened (rad hard) 1 and 2 Mb parallel interface ferroelectric-RAM (F-RAM) nonvolatile memory devices. These new additions to Infineon’s memory portfolio offer up to 120 years of data retention at 85 degrees Celsius, along with random access and full memory write at bus speeds.

Infineon’s F-RAM devices are inherently rad hard, making them well-suited for space-based applications that have traditionally used slower, less robust EEPROM nonvolatile storage devices. Compared to alternatives, these devices offer faster memory random access, better data security with instant non-volatile write technology, and low power requirements, with programming voltages as low as 2 V and maximum operating current of 20 mA.

Infineon’s rad hard F-RAM devices are designed for data storage in sensors and instruments, data logging for calibration data, secure key storage for data encryption, and boot code storage. They are also suitable for avionic and other applications requiring military standard temperature grades (-55°C to 125°C).

The new Infineon parallel interface F-RAM devices feature non-volatile memory capabilities, including instantaneous switching of atomic state. They are immune to soft errors, magnetic fields, and radiation effects, with no need for software management of page boundaries and near-infinite endurance (10^13 write cycles), eliminating the need for wear leveling.

The parallel devices are available in 44-lead ceramic TSOP packaging, with QML-V qualified devices offering radiation performance of: TID: >150 Krad (Si);  SEL: >96 MeV·cm^2/mg @115°C; SEU: Immune; SEFI: <1.34 * 10^-4 err/dev.day (active/standby) / Immune (sleep mode);

The complete portfolio of rad hard F-RAM non-volatile memories, including 2 Mb SPI and 1 and 2 Mb parallel devices, is available now.